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STP38N06 n - channel enhancement mode "ultra high density" power mos transistor preliminary data n typical r ds(on) = 0.026 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n high current capability n 175 o c operating temperature n high dv/dt ruggedness n application oriented characterization applications n high current, high speed switching n power motor control n dc-dc & dc-ac converters n syncronous rectification internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k w )60v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c38a i d drain current (continuous) at t c = 100 o c26a i dm ( ) drain current (pulsed) 152 a p tot total dissipation at t c = 25 o c90w derating factor 0.6 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d STP38N06 60 v < 0.03 w 38 a (*) march 1996 1 2 3 to-220 1/11
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.66 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 38 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 300 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 75 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 26 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 234v r ds(on) static drain-source on resistance v gs = 10v i d = 19 a v gs = 10v i d = 19 a t c = 100 o c 0.026 0.03 0.06 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 38 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 19 a 14 19 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 2000 350 80 2800 450 120 pf pf pf STP38N06 2/11
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 30 v i d = 19 a r g = 50 w v gs = 10 v (see test circuit, figure 3) 45 280 65 380 ns ns (di/dt) on turn-on current slope v dd = 48 v i d = 38 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 240 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 40 v i d = 38 a v gs = 10 v 60 10 20 80 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 48 v i d = 38 a r g = 50 w v gs = 10 v (see test circuit, figure 5) 65 140 230 85 180 300 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 38 152 a a v sd ( * ) forward on voltage i sd = 38 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 38 a di/dt = 100 a/ m s v dd = 40 v t j = 150 o c (see test circuit, figure 5) 85 0.3 7 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area ( 1 ) i sd 20 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax safe operating area thermal impedance STP38N06 3/11
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage STP38N06 4/11
capacitance variations normalized on resistance vs temperature turn-off drain-source voltage slope normalized gate threshold voltage vs temperature turn-on current s lope cross-over time STP38N06 5/11
switching safe operating area source-drain diode forward characteristics fig. 1: unclamped inductive load test circuit accidental overload area fig. 2: unclamped inductive waveform STP38N06 6/11
fig. 3: switching times test circuits for resistive load fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit STP38N06 7/11
pspice parameters subcircuit components symbol parameter value unit s1 (v14_16<0) (see power mosfet model subcircuit) on s2 (v16_11<0) (see power mosfet model subcircuit) on ld drain inductance 8 nh lg gate inductance 10 nh ls source inductance 10 nh rdrain drain resistance 1.9e -2 w rgate gate resistance 1 w cgd gate drain capacitance 3.92 nf cgs gate source capacitance 1.9 nf alfa drift coeficient 1e -3 v -1 rgn negative bias resistance 10 k w diode drain gate (depletion capacitance) symbol parameter value unit cjo zero bias p-n capacitance 2.6 nf vj p-n potential 0.1 v m p-n grading coefficient 0.6 diode drain source symbol parameter value unit cjo zero bias p-n capacitance 7.8 nf vj p-n potential 0.1 v m p-n grading coefficient 0.6 tt transit time 20 nsec n mosfet symbol parameter value unit l channel length 1 m meter w channel width 1 m meter level model index 3 tox oxide thickness 1 meter vto zero bias threshold voltage 3.25 v u0 surface mobility 600 cm 2 /vs theta mobility modulation 0.005 v -1 vmax maximum drift velocity 0 meter/sec kp trans conductance coefficient 28 amp/v 2 for trans ient simulation applicate u.i.c. (use initial condit ion) option STP38N06 8/11
pspice netlist of the subcircuit .subckt STP38N06 1 2 3 *value of the package inductances ls 1 11 10n lg 2 12 10n ld 3 13 7n *resistance of the gate polysilicon rg 12 16 1 *epy and drift resistances rd 13 14 1.9e-02 edri 14 15 poly(2) (13 14) (13 11) 0 0 0 0 1e-3 *capacitance gate source cgs 16 11 1.90n *optional for negative gate bias *s2 51 11 11 16 switch *cgn 51 16 3.92n *rgn 51 16 10k *miller capacitance cgd 16 17 3.92n * depletion capacitance dgd 17 14 dgd s1 17 14 16 14 switch .model dgd d +is= +cjo=2.6n +vj=.1 +m=.6 .model switch vswitch +ron=1m +roff=1meg +von=0.1 * output capacitance and body drain diode dbd 11 14 dbd .model dbd d +tt=20n +cjo=7.8n +vj=.1 +m=.6 * model of the mosfet mmain 15 16 11 11 mmain l=1u w=1u .model mmain nmos +level=3 +tox=1 +vto=3.25 +uo=600 +theta=0.005 +vmax=5e7 +kp=28 .ends power mosfet model subcircuit STP38N06 9/11
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c STP38N06 10/11
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STP38N06 11/11

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